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| SMD Type Complementary Power Transistors MJD45H11 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching Speeds +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 Complementary Pairs Simplifies Designs Pb?Free Packages are Available +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Total Device Dissipation FR-5 Board @TA = 25 Derate above 25 Total Device Dissipation Alumina Substrate @TA = 25 Derate above 25 Junction temperature Storage temperature Thermal Resistance, Junction?to?Case Thermal Resistance, Junction-to-Ambient Lead Temperature for Soldering Symbol VCEO VEB IC ICP PD Rating 80 5 8 16 20 0.16 1.75 0.014 150 -55 to +150 6.25 71.4 260 /W /W Unit V V A A W W/ W W/ PD Tj Tstg ReJC ReJA TL 3.80 www.kexin.com.cn 1 SMD Type MJD45H11 Electrical Characteristics Ta = 25 Parameter Collector-emitter sustaining voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector capacitance Current-gain-bandwidth product *2 Delay and rise times Storage time Fall time Symbol Testconditons Min 80 Transistors Typ Max Unit V VCEo(sus) IC = 30 mA, IB = 0 ICES IEBO VCE = Rated VCEO,VEB = 0 VBE = 5V, IC = 0 10 50 1 1.5 60 40 230 40 135 500 100 iA iA V V VCE(sat) IC = 8 A, IB = 0.4 A VBE(sat) IC = 8 A, IB = 0.8 A hFE Ccb fT td + tr ts tf IC = 2 A, VCE = 1 V IC = 4 A, VCE = 1 V VCB = 10 V,ftest = 1 MHz IC = 0.5 A,VCE = 10 V,f = 20 MHz IC = 5 A, IB1 = 0.5 A IC = 5 A, IB1 = IB2 = 0.5 A IC = 5 A, IB1 = IB2 = 0.5 A pF MHz ns ns ns Marking Marking J45H11 2 www.kexin.com.cn |
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